A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology

被引：3

作者：

Knapp, H ^{[1
]}

Wilhelm, W ^{[1
]}

Wurzer, M ^{[1
]}

机构：

[1] Infineon Technol AG, Corp Res Dept, D-81730 Munich, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 02期

关键词：

frequency conversion; microwave bipolar integrated circuits;

D O I：

10.1109/22.821762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a low-power static frequency divider with a divide ratio of eight. It operates up to 15 GHz, consuming only 22 mA from a 3.6-V supply. The chip is manufactured in a 0.8-mu m silicon bipolar production technology with a cutoff frequency of 25 GHz, The circuit has a single-ended input and output and is mounted in a six-pin SOT363 plastic package.

引用

页码：205 / 208

页数：4

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