Physical mechanism of coherent acoustic phonons generation and detection in GaAs semiconductor

We first describe the picosecond acoustic interferometry study of GaAs with two-colors pump-probe laser pulses. The dependence of the generation process on the pump wavelength and the detection process on the probe wavelength both can cause the shift in the phase of the Brillouin signal. Secondly, in order to distinguish the short high frequency wide-band acoustic pulse from low frequency Brillouin contribution, we accomplished experiments with (100)GaAs semiconductor coated by a transparent and photoelastically inactive thin film, serving a delay line for the acoustic pulse. Even with highly penetrating pump light (xi approximate to 680nm), short acoustic disturbances of approximate to 7ps of duration have been registered.