Physical mechanism of coherent acoustic phonons generation and detection in GaAs semiconductor

被引：8

作者：

Babilotte, P. ^{[1
]}

Morozov, E. ^{[1
]}

Ruello, P. ^{[1
]}

Mounier, D. ^{[1
]}

Edely, M. ^{[1
]}

Breteau, J-M ^{[1
]}

Bulou, A. ^{[1
]}

Gusev, V. ^{[1
]}

机构：

[1] Univ Maine, CNRS, UMR 6087, Lab Phys Etat Condense, F-72085 Le Mans, France

来源：

12TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER (PHONONS 2007) | 2007年 / 92卷

关键词：

D O I：

10.1088/1742-6596/92/1/012019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We first describe the picosecond acoustic interferometry study of GaAs with two-colors pump-probe laser pulses. The dependence of the generation process on the pump wavelength and the detection process on the probe wavelength both can cause the shift in the phase of the Brillouin signal. Secondly, in order to distinguish the short high frequency wide-band acoustic pulse from low frequency Brillouin contribution, we accomplished experiments with (100)GaAs semiconductor coated by a transparent and photoelastically inactive thin film, serving a delay line for the acoustic pulse. Even with highly penetrating pump light (xi approximate to 680nm), short acoustic disturbances of approximate to 7ps of duration have been registered.

引用

页数：4

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