Impact of displacement damage on single event transient charge collection in SiGe HBTs

This paper presents an investigation into the impact of neutron-induced displacement damage on the single event transient (SET) charge collection in silicon-germanium heterojunction bipolar transistors (SiGe HBT) based on pulsed laser micro-beam experiment and technology computer aided design (TCAD) simulation. Experimental results show that the transient charge collection of the collector terminal decreases after neutron irradiation with a fluence of 5x10(13) n/cm(2). In addition, the decrease of charge collection is more significant outside the collector-substrate (C-S) junction than inside. Combining with the TCAD simulation results, it is confirmed that the minority carrier lifetime which is shortened by neutron-induced defects plays an important role in the decrease of charge collection, and the disparity between the decreases of charge collection outside and inside the C-S junction is related to the dominating collection mechanism and transient duration.