Plasma damage considerations involving Metal-Insulator-Metal (MIM) capacitors

被引：4

作者：

O'Connell, B ^{[1
]}

Thibeault, T ^{[1
]}

Chaparala, P ^{[1
]}

机构：

[1] Natl Semicond Corp, Santa Clara, CA 95052 USA

来源：

2004 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY | 2004年

关键词：

D O I：

10.1109/ICICDT.2004.1309925

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Impact on MIM capacitor reliability with respect to plasma damage is investigated for different dielectric films and layout variations. MIM capacitor reliability is found to be sensitive to dielectric type, MIM layout and bottom plate metal processing. Plasma Process steps responsible for affecting MIM reliability are identified.

引用

页码：123 / 126

页数：4