Crossover from 3D to 2D Quantum Transport in Bi2Se3/In2Se3 Superlattices

被引:49
作者
Zhao, Yanfei [1 ,2 ]
Liu, Haiwen [1 ,2 ]
Guo, Xin [3 ]
Jiang, Ying [4 ]
Sun, Yi [1 ,2 ]
Wang, Huichao [1 ,2 ]
Wang, Yong [4 ]
Li, Han-Dong [5 ]
Xie, Mao-Hai [3 ]
Xie, Xin-Cheng [1 ,2 ]
Wang, Jian [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[4] Zhejiang Univ, Ctr Electron Microscopy, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
[5] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
topological insulators; superlattices; transport dimensionality; weak-localization; weak-antilocalization; TOPOLOGICAL INSULATOR BI2SE3; WEAK-LOCALIZATION; SURFACE CONDUCTION; MAGNETORESISTANCE; STATES;
D O I
10.1021/nl502220p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The topological insulator/normal insulator (TI/NI) superlattices (SLs) with multiple Dirac channels are predicted to offer great opportunity to design novel materials and investigate new quantum phenomena. Here, we report first transport studies on the SLs composed of TI Bi2Se3 layers sandwiched by NI In2Se3 layers artificially grown by molecular beam epitaxy (MBE). The transport properties of two kinds of SL samples show convincing evidence that the transport dimensionality changes from three-dimensional (3D) to two-dimensional (2D) when decreasing the thickness of building block Bi2Se3 layers, corresponding to the crossover from coherent TI transport to separated TI channels. Our findings provide the possibility to realizing 3D surface states in TI/NI SLs.
引用
收藏
页码:5244 / 5249
页数:6
相关论文
共 45 条
[1]  
Analytis JG, 2010, NAT PHYS, V6, P960, DOI [10.1038/nphys1861, 10.1038/NPHYS1861]
[2]   FITTING TO MAGNETORESISTANCE UNDER WEAK LOCALIZATION IN 3 DIMENSIONS [J].
BAXTER, DV ;
RICHTER, R ;
TRUDEAU, ML ;
COCHRANE, RW ;
STROMOLSEN, JO .
JOURNAL DE PHYSIQUE, 1989, 50 (13) :1673-1688
[3]   WEAK LOCALIZATION IN THIN-FILMS - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J].
BERGMANN, G .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1984, 107 (01) :1-58
[4]   Weyl Semimetal in a Topological Insulator Multilayer [J].
Burkov, A. A. ;
Balents, Leon .
PHYSICAL REVIEW LETTERS, 2011, 107 (12)
[5]   Effects of Magnetic Doping on Weak Antilocalization in Narrow Bi2Se3 Nanoribbons [J].
Cha, Judy J. ;
Claassen, Martin ;
Kong, Desheng ;
Hong, Seung Sae ;
Koski, Kristie J. ;
Qi, Xiao-Liang ;
Cui, Yi .
NANO LETTERS, 2012, 12 (08) :4355-4359
[6]   Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 [J].
Checkelsky, J. G. ;
Hor, Y. S. ;
Liu, M. -H. ;
Qu, D. -X. ;
Cava, R. J. ;
Ong, N. P. .
PHYSICAL REVIEW LETTERS, 2009, 103 (24)
[7]   Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport [J].
Chen, J. ;
He, X. Y. ;
Wu, K. H. ;
Ji, Z. Q. ;
Lu, L. ;
Shi, J. R. ;
Smet, J. H. ;
Li, Y. Q. .
PHYSICAL REVIEW B, 2011, 83 (24)
[8]   Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].
Chen, J. ;
Qin, H. J. ;
Yang, F. ;
Liu, J. ;
Guan, T. ;
Qu, F. M. ;
Zhang, G. H. ;
Shi, J. R. ;
Xie, X. C. ;
Yang, C. L. ;
Wu, K. H. ;
Li, Y. Q. ;
Lu, L. .
PHYSICAL REVIEW LETTERS, 2010, 105 (17)
[9]  
Dugaev V. K., 1984, SOV PHYS JETP, V50, P1038
[10]   NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J].
ESAKI, L ;
CHANG, LL .
PHYSICAL REVIEW LETTERS, 1974, 33 (08) :495-498