Polarized photoluminescence imaging analysis around small-angle grain boundaries in multicrystalline silicon wafers for solar cells

被引：10
作者：
Kato, Gen [1 ,2 ]
Tajima, Michio [1 ,2 ]
Toyota, Hiroyuki [2 ]
Ogura, Atsushi [1 ]
机构：
[1] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan
[2] Inst Space & Astronaut Sci JAXA, Sagamihara, Kanagawa 2525210, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 08期
关键词：
BEAM-INDUCED CURRENT; ROOM-TEMPERATURE; RECOMBINATION; DISLOCATIONS; DEFECTS; LUMINESCENCE; CRYSTALS; SPECTROSCOPY; IMPURITIES;
D O I：
10.7567/JJAP.53.080303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have shown the effectiveness of polarized photoluminescence imaging for analyzing the structural and spectroscopic properties of small-angle grain boundaries (SA-GBs) in multicrystalline Si. The dislocation-related deep-level emission band at approximately 0.79 eV at room temperature was found to be polarized, whereas the band-edge emission did not show the polarization effect. The anisotropy of the 0.79 eV band was classified into two groups depending on the tilt and twist characteristics of SA-GBs determined by the electron backscatter diffraction measurement. (C) 2014 The Japan Society of Applied Physics
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页数：3
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