Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

被引：3
作者：
Yoo, Taehee [1 ]
Lee, Sanghoon [1 ]
Liu, Xinyu [2 ]
Furdyna, Jacek K. [2 ]
Lee, Dong Uk [3 ,4 ]
Kim, Eun Kyu [3 ,4 ]
机构：
[1] Korea Univ, Dept Phys, Seoul 136701, South Korea
[2] Univ Notre Dame, Dept Phys, South Bend, IN 46556 USA
[3] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[4] Hanyang Univ, Res Inst Nat Sci, Seoul 133791, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
基金：
美国国家科学基金会; 新加坡国家研究基金会;
关键词：
TUNNELING MAGNETORESISTANCE; HETEROSTRUCTURES; REVERSAL; FILM;
D O I：
10.1063/1.4863375
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to similar to 45% when the bias voltage is low (similar to 0.2mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices. (C) 2014 AIP Publishing LLC.
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页数：3
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