Dry development of sub-0.25 mu m features patterned with 193 nm silylation resist

The dry development of sub-0.25 mu m silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist lass, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 mu m silylated resist features. (C) 1996 American Vacuum Society.