Dry development of sub-0.25 mu m features patterned with 193 nm silylation resist

被引：8

作者：

Palmateer, SC

Forte, AR

Kunz, RR

Horn, MW

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.580282

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dry development of sub-0.25 mu m silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist lass, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 mu m silylated resist features. (C) 1996 American Vacuum Society.

引用

页码：1132 / 1136

页数：5

共 34 条

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OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 1787 - 1796
[2] Fabrication of microstructures for studies of electromigration in sub-0.25 mu m metal interconnections
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2869 - 2874
[3] Advanced LPCVD BPSG deposition for sub-0.25 mu m microelectronic fabrication
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PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 863 - 868
[4] NA/sigma optimisation strategies for an advanced DUV stepper applied to 0.25 mu m and sub-0.25 mu m critical levels
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OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 320 - 332
[5] Practical implementation of alternating PSM to memory device of sub-0.25 mu m technology
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Kim, HB
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OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 : 444 - 452
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Takebe, Yoko
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ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U247 - U254
[7] Development of new resist materials for 193-nm dry and immersion lithography
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Yokokoji, O
MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 1091 - 1093
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ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 503 - 514
[9] Ultrathin oxide for sub-0.25 mu m technology in silicon IC's: Impact of stacking & nitridation
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[10] Dry development for 0.25 mu m top surface imaging
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) : 2461 - 2467

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