Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes

被引：7
作者：
Han, Sanghoo [1 ]
Cho, Inje [1 ]
Kim, Hyung [1 ]
Mageshwari, Kandhasamy [1 ]
Park, Jinsub [1 ,2 ]
机构：
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2015年 / 7卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
AlGaN/GaN; Schottky Diodes; Ohmic Contact; Graphene; AREA; FILMS; TRANSPARENT; SURFACES; OXIDE;
D O I：
10.1166/nnl.2015.2015
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigated the structural and electrical characteristics of graphene after O-2 plasma treatment and H-2 annealing, and we further studied the effects of these treatments on the device performance of AlGaN/GaN Schottky diodes. Raman spectroscopy revealed that increasing O-2 plasma power during treatment enhanced the D-band to G-band intensity ratio. Atomic force microscopy and X-ray photoelectron spectroscopy revealed variation in surface morphology and a shift in carbon and oxygen binding energies, respectively, which correlated an increase in the sheet resistance of graphene. The current-voltage (I-V) characteristics of AlGaN/GaN Schottky diodes demonstrated degradation of electrical properties after O-2 plasma treatment. After H-2 annealing, the I-V curves of Schottky diodes recovered due to improvement in the structural and electrical properties of graphene damaged during O-2 plasma treatment.
引用
收藏
页码：708 / 712
页数：5
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