Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

被引：19

作者：

Hong, Jeong Soo ^{[1
]}

Matsushita, Nobuhiro ^{[1
]}

Kim, Kyung Hwan ^{[2
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[2] Gachon Univ, Dept Elect Engn, Songnam 461701, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 07期

关键词：

GAZO; sputtering; oxygen; thin film; ZnO; SUBSTRATE-TEMPERATURE; PARTIAL-PRESSURE; OXIDE-FILMS; DEPOSITION; CONDUCTIVITY; GROWTH;

D O I：

10.1088/0268-1242/29/7/075007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under oxygen atmosphere exhibited smooth surface and the lowest value of root-mean-square was 0.6 nm at oxygen 1 sccm, this value is lower than that of film deposited at pure argon atmosphere. The (0 0 2) peak intensity was increased with increase in oxygen flow rate, the peak maximized at oxygen 1 sccm. All films indicated high transmittance above 85% in the visible range and the lowest resistivity of 8.9 x 10(-4) Omega.cm was obtained at pure argon atmosphere.

引用

页数：5

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