Self-Aligned Single-Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices

被引：51
作者：
Tan, Lifang [1 ]
Han, Jiangli [1 ]
Mendes, Rafael G. [2 ]
Ruemmeli, Mark H. [2 ]
Liu, Jinxin [1 ]
Wu, Qiong [1 ]
Leng, Xuanye [1 ]
Zhang, Tao [1 ]
Zeng, Mengqi [1 ]
Fu, Lei [1 ]
机构：
[1] Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Peoples R China
[2] IFW Dresden, D-01069 Dresden, Germany
来源：
ADVANCED ELECTRONIC MATERIALS | 2015年 / 1卷 / 11期
关键词：
CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; GRAPHENE ELECTRONICS; ATOMIC LAYERS; GROWTH; MONOLAYER; FILM; COPPER; FOIL; HETEROSTRUCTURES;
D O I：
10.1002/aelm.201500223
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
[No abstract available]
引用
收藏
页数：6
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