AN ACCURATE GATE DELAY MODEL FOR HIGH SPEED DIGITAL AND ANALOG CIRCUITS

被引：0

作者：

Dobes, Josef ^{[1
]}

Panko, Vaclav ^{[1
]}

Pospisil, Ladislav ^{[1
]}

机构：

[1] Czech Tech Univ, Dept 13137, Prague 16627 6, Czech Republic

来源：

PROCEEDINGS OF THE 2008 IEEE DALLAS CIRCUITS AND SYSTEMS WORKSHOP: SYSTEM-ON-CHIP (SOC) - DESIGN, APPLICATIONS, INTEGRATION, AND SOFTWARE | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At present, most of simulation programs can characterize gate delays of microwave transistors. However, the delay is mostly approximated by means of a first-order differential equation only. In the paper, a more accurate way is suggested which is based on an appropriate second-order Bessel function. The delay model is implemented to a slightly but efficiently modified classic MESFET model. The proposed model does not create spurious oscillations that are typical for any LC approximations, and the simulation times are comparable with those obtained without the delay model. Properties of the implementation of the second-order Bessel function are demonstrated by an analysis of a tunable distributed microwave oscillator.

引用

页码：37 / 40

页数：4

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