Few-electron semiconductor quantum dots with Gaussian confinement

被引:28
作者
Gomez, Sergio S. [1 ,2 ]
Romero, Rodolfo H. [1 ,2 ]
机构
[1] Univ Nacl Nordeste, Fac Ciencias Exactas & Nat, RA-3400 Corrientes, Argentina
[2] Consejo Nacl Invest Cient & Tecn, Inst Modelado & Innovac Tecnol, RA-3400 Corrientes, Argentina
来源
CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2009年 / 7卷 / 01期
关键词
Quantum dots; Gaussian potential; electronic structure; SCHRODINGER-EQUATION; STATES;
D O I
10.2478/s11534-008-0132-z
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have performed Hartree-Fock calculations of the electronic structure of N <= 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V0R2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
引用
收藏
页码:12 / 21
页数:10
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