Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range

被引:10
作者
Kozlov, D. V. [1 ,2 ]
Rumyantsev, V. V. [1 ,2 ]
Kadykov, A. M. [1 ,6 ]
Fadeev, M. A. [1 ,6 ]
Kulikov, N. S. [1 ,2 ]
Utochkin, V. V. [1 ,2 ]
Mikhailov, N. N. [3 ,4 ]
Dvoretskii, S. A. [3 ,5 ]
Gavrilenko, V. I. [1 ,2 ]
Hubers, H. -W. [6 ]
Teppe, F. [7 ]
Morozov, S. V. [1 ,2 ]
机构
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
[3] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[4] Novosibirsk State Univ, Novosibirsk 630090, Russia
[5] Tomsk State Univ, Tomsk 634050, Russia
[6] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
[7] Univ Montpellier, L2C, F-34095 Montpellier, France
基金
俄罗斯科学基金会;
关键词
SHALLOW ACCEPTORS; STATES;
D O I
10.1134/S0021364019100114
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The terahertz photoluminescence spectra of HgTe/CdHgTe heterostructure with quantum wells under interband optical excitation with a power of 3 to 300 mW have been studied in the temperature range of 30-100 K. The photoluminescence spectrum includes a band corresponding to quantum energies below the width of the band gap. The position of this band does not change with increasing temperature. This property allows attributing it to the capture of holes by acceptor centers. It has been shown that these acceptor centers are singly ionized mercury vacancies, which are double acceptors. A nonmonotonic dependence of the intensity of a signal of a long-wavelength photoluminescence band on the power of an exciting source has been revealed. A short-wavelength photoluminescence band corresponding to interband transitions appears with an increase in the exciting power. It has been shown that this effect is caused by the saturation of the number of partially ionized mercury vacancies with increasing pump intensity.
引用
收藏
页码:657 / 662
页数:6
相关论文
共 16 条
  • [1] Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells
    Aleshkin, VY
    Andreev, BA
    Gavrilenko, VI
    Erofeeva, IV
    Kozlov, DV
    Kuznetsov, OA
    [J]. SEMICONDUCTORS, 2000, 34 (05) : 563 - 567
  • [2] Resonant acceptor states in Ge/Ge1-xSix MQW heterostructures
    Aleshkin, VY
    Andreev, BA
    Gavrilenko, VI
    Erofeeva, IV
    Kozlov, DV
    Kuznetsov, OA
    [J]. NANOTECHNOLOGY, 2000, 11 (04) : 348 - 350
  • [3] Terahertz impurity luminescence under the interband photoexcitation of semiconductors
    Andrianov, A. V.
    Zakhar'in, A. O.
    Ivanov, Yu. L.
    Kipa, M. S.
    [J]. JETP LETTERS, 2010, 91 (02) : 96 - 99
  • [4] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS
    BALDERESCHI, A
    LIPARI, NO
    [J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
  • [5] Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping
    Firsov, D. A.
    Vorobjev, L. E.
    Panevin, V. Yu
    Sofronov, A. N.
    Balagula, R. M.
    Makhov, I. S.
    Kozlov, D. V.
    Vasil'ev, A. P.
    [J]. SEMICONDUCTORS, 2015, 49 (01) : 28 - 32
  • [6] BINDING-ENERGIES OF GROUND AND EXCITED-STATES OF SHALLOW ACCEPTORS IN GAAS/GA1-XALXAS QUANTUM-WELLS
    FRAIZZOLI, S
    PASQUARELLO, A
    [J]. PHYSICAL REVIEW B, 1990, 42 (08): : 5349 - 5352
  • [7] Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells
    Kozlov, D. V.
    Rumyantsev, V. V.
    Morozov, S. V.
    Kadykov, A. M.
    Fadeev, M. A.
    Zholudev, M. S.
    Varavin, V. S.
    Mikhailov, N. N.
    Dvoretskii, S. A.
    Gavrilenko, V. I.
    Teppe, F.
    [J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2018, 127 (06) : 1125 - 1129
  • [8] Mercury vacancies as divalent acceptors in Hg y Te1-y /Cd x Hg1-x Te structures with quantum wells
    Kozlov, D. V.
    Rumyantsev, V. V.
    Morozov, S. V.
    Kadykov, A. M.
    Fadeev, M. A.
    Varavin, V. S.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Gavrilenko, V. I.
    Teppe, F.
    [J]. SEMICONDUCTORS, 2016, 50 (12) : 1662 - 1668
  • [9] QUANTUM THEORY OF CYCLOTRON RESONANCE IN SEMICONDUCTORS - GENERAL THEORY
    LUTTINGER, JM
    [J]. PHYSICAL REVIEW, 1956, 102 (04): : 1030 - 1041
  • [10] Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μm
    Morozov, S. V.
    Rumyantsev, V. V.
    Antonov, A. V.
    Maremyanin, K. V.
    Kudryavtsev, K. E.
    Krasilnikova, L. V.
    Mikhailov, N. N.
    Dvoretskii, S. A.
    Gavrilenko, V. I.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (07)