Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

被引:35
作者
Porrazzo, Rossella [1 ,2 ]
Luzio, Alessandro [1 ]
Bellani, Sebastiano [1 ,2 ]
Bonacchini, Giorgio Ernesto [1 ,2 ]
Noh, Yong-Young [3 ]
Kim, Yun-Hi [1 ,4 ,5 ]
Lanzani, Guglielmo [1 ,2 ]
Antognazza, Maria Rosa [1 ]
Caironi, Mario [1 ]
机构
[1] Ctr Nano Sci & Technol, Ist Italiano Tecnol, Via Pascoli 70-3, I-20133 Milan, Italy
[2] Politecn Milan, Dipartimento Fis, Plaza Vinci 32, I-20133 Milan, Italy
[3] Dongguk Univ, Dept Energy & Mat Engn, 30 pildong-ro 1-gil, Seoul 04620, South Korea
[4] Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
[5] Gyeongsang Natl Univ, Res Inst Green Energy Convergence Technol, Jinju 660701, South Korea
基金
新加坡国家研究基金会; 欧洲研究理事会;
关键词
POLYMER PHOTOVOLTAIC CELLS; CHARGE-TRANSPORT; ELECTROCHEMICAL TRANSISTORS; NAPHTHALENE DIIMIDE; MOBILITY; SURFACE; FILM; SEMICONDUCTORS; POLYTHIOPHENE; STABILITY;
D O I
10.1021/acsomega.6b00256
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide copolymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 mu F cm(-2) in full accumulation and a mobility-capacitance product of 7 x 10(-3) mu F/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.
引用
收藏
页码:1 / 10
页数:10
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