Small signal modal gain measurement of ridge waveguide semiconductor optical amplifiers operating at 2μm suitable for active-passive integration

被引：0

作者：

Latkowski, S. ^{[1
]}

Thijs, P. ^{[1
]}

van Veldhoven, P. J. ^{[1
]}

Rabbani-Haghighi, H. ^{[1
]}

Smit, M. K. ^{[1
]}

Bente, E. A. J. M. ^{[1
]}

机构：

[1] Tech Univ Eindhoven, COBRA Res Inst, Den Dolech 2, NL-5611 AZ Eindhoven, Netherlands

来源：

2013 IEEE PHOTONICS CONFERENCE (IPC) | 2013年

关键词：

Semiconductor optical amplifiers; Integrated optics materials; Laser materials; Quantum-well; -wire and -dot devices; SPECTRA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modal gain characterization of mid-infrared semiconductor optical amplifiers intended for an active-passive integration platform is presented. Measured gain profiles reveal the peak values at around 2.07 mu m and 3dB bandwidth up to 27nm.

引用

页码：258 / 259

页数：2

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