Electrical Spin Injection into Silicon Using MgO Tunnel Barrier

被引：75

作者：

Sasaki, Tomoyuki ^{[1
]}

Oikawa, Tohru ^{[1
]}

Suzuki, Toshio ^{[2
]}

Shiraishi, Masashi ^{[3
]}

Suzuki, Yoshishige ^{[3
]}

Tagami, Katsumichi ^{[1
]}

机构：

[1] TDK Corp, SQ Res Ctr, Nagano 3858555, Japan

[2] Akita Res Inst Adv Technol, AIT, Akita 0101623, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 05期

关键词：

RECONFIGURABLE LOGIC; ROOM-TEMPERATURE; PRECESSION; TRANSPORT;

D O I：

10.1143/APEX.2.053003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorus doped silicon-on-insulator substrate. Spin injection signals in the non-local scheme were observed up to 120 K, which is the highest value where band transferred spins in Si have ever been reported, and spin diffusion length was estimated to be about 2.25 mu m at 8 K. Temperature dependence and injection current dependence of the non-local voltage were also investigated. It is clarified that MgO tunnel barrier is effective for the spin injection into silicon. (c) 2009 The Japan Society of Applied Physics

引用

页数：3

共 18 条

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