Modification of wetting properties of SiOx surfaces by Ar implantation

The aim of this experiment is to better understand the mechanism leading to the modification of the wetting properties of insulating (quartz) and non-insulating (Si) surfaces by ion and atom implantation. Coupons of quartz and silicon (with its native oxide layer) have been irradiated by means of 3 keV Ar ions and atoms with a fluence of 1.8 x 10(16) Ar/cm(2). Some exposures to Ar ions have been performed under oxygen partial pressure (similar to5 x 10(-5) Torr). The samples have been characterized before and after implantation by means of contact angle hysteresis measurements, Rutherford backscattering spectroscopy (RBS) and angle resolved X-ray photoelectron spectroscopy (ARXPS). Irradiation with argon ions or atoms has produced a more hydrophilic surface immediately after implantation. Ar depth profiling by means of RBS has shown that 4% of implanted (atoms and ions) Ar has been retained in quartz, while 13% and 21% of Ar has been retained in silicon after Ar implantation with and without oxygen partial pressure, respectively. However, no difference in the depth distribution has been measured. Characterization by means of ARXPS has shown a noticeable change in the composition of the quartz and silicon oxide surfaces (implantation of Si under an O(2) partial pressure producing a thicker oxide layer) which can explain the differences in the reported Ar retention. In general, the irradiation have removed a large portion of oxygen present in the pre-existing carbonaceous layer on the surface of the samples. The ion beam irradiation has been more efficient than atom beam to both, increase the wettability of the quartz surfaces and enhance the concentration of the carbonaceous layer in "dispersed islands" on the surfaces. (C) 2002 Elsevier Science B.V. All rights reserved.