Improved brightness, efficiency, and stability of sputter deposited alternating current thin film electroluminescent ZnS:Mn by codoping with potassium chloride

被引:34
作者
Waldrip, KE [1 ]
Lewis, JS
Zhai, Q
Davidson, MR
Holloway, PH
Sun, SS
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Planar Syst, Beaverton, OR 97006 USA
[3] Univ Florida, MICROFABRITECH, Gainesville, FL 32611 USA
关键词
D O I
10.1063/1.126007
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electroluminescent ZnS:Mn thin films have been codoped with KCl via an ex situ deposition and diffusion process. The brightness, efficiency, and stability of sputter deposited ZnS:Mn alternating current thin film electroluminescent devices have been greatly improved over untreated devices. Potassium chloride doping is shown to have a modest fluxing effect on the grain size of ZnS:Mn films, particularly in the region of the film where nucleation occurs. However, improved electroluminescence is postulated to be strongly influenced by doping control of electric fields and injected charge. (C) 2000 American Institute of Physics. [S0003-6951(00)04410-7].
引用
收藏
页码:1276 / 1278
页数:3
相关论文
共 14 条
[2]   Alkali metal coactivators in SrS: Cu,F thin-film electroluminescent devices [J].
Keir, PD ;
Wager, JF ;
Clark, BL ;
Li, D ;
Keszler, DA .
APPLIED PHYSICS LETTERS, 1999, 75 (10) :1398-1400
[3]  
KING CN, 1992, J SOC INF DISPLAY, V1, P1
[4]  
Kobayashi H., 1996, Journal of the Society for Information Display, V4, P157, DOI 10.1889/1.1985007
[5]   THE INFLUENCE OF CHLORINE ON THE CRYSTAL-STRUCTURE AND ELECTROLUMINESCENT BEHAVIOR OF ZNS-MN FILMS IN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
KUN, ZK ;
LEKSELL, D ;
MALMBERG, PR ;
MURPHY, J ;
SIENKIEWICZ, LJ .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :287-300
[6]  
Neumark GF, 1997, MAT SCI ENG R, V21, P1, DOI 10.1016/S0927-796X(97)00008-9
[7]   On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxy [J].
Ohishi, M ;
Yoneta, M ;
Ishii, S ;
Ohura, M ;
Hiroe, Y ;
Saito, H .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :376-379
[8]   The structure, device physics, and material properties of thin film electroluminescent displays [J].
Rack, PD ;
Holloway, PH .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1998, 21 (04) :171-219
[9]   ELECTROLUMINESCENCE OF ZINC-SULFIDE THIN-FILMS ACTIVATED WITH DONORS AND ACCEPTORS [J].
SHIIKI, M ;
KANEHISA, O .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :1035-1039
[10]   PROPERTIES AND PERFORMANCE OF TFEL STRUCTURES [J].
TORNQVIST, R .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :538-544