Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)

被引：21

作者：

Kim, JS ^{[1
]}

Lee, JH ^{[1
]}

Hong, SU ^{[1
]}

Han, WS ^{[1
]}

Kwack, HS ^{[1
]}

Lee, CW ^{[1
]}

Oh, DK ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305606, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 06期

关键词：

D O I：

10.1063/1.1779964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Seven stacks of self-assembled InAs quantum dots (QDs) separated by 28 nm thick InAlGaAs barriers were grown on InP (001) substrate by a solid-source molecular-beam epitaxy and were investigated by cross-sectional transmission electron microscopy and photoluminescence spectroscopy. Gain guided broad-area lasers with a stripe width of 75 mum were fabricated by using the seven-stacked InAs QD layers with the InAlGaAs-InAlAs material system on InP (001). The lasing operation from InAs QDs was observed up to 260 K and the characteristic temperature of the uncoated QD laser calculated from the temperature dependence of threshold current density was 377 K for temperatures up to 200 K, and 138 K above 200 K. The drastic decrease in the characteristic temperature above 200 K was mainly related to the thermal behavior of carriers in QDs, and possibly the thermal coupling of the QDs to the wetting layer and the waveguide region. (C) 2004 American Institute of Physics.

引用

页码：1033 / 1035

页数：3

共 13 条

[1] InAs self-assembled quantum-dot lasers grown on (100) InP [J].

Allen, CN ;

Poole, PJ ;

Marshall, P ;

Fraser, J ;

Raymond, S ;

Fafard, S .

APPLIED PHYSICS LETTERS, 2002, 80 (19) :3629-3631

[2] Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Olivares, J ;

Salem, B ;

Benyattou, T ;

Bremond, G .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :506-510

[3] Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP [J].

Folliot, H ;

Loualiche, S ;

Lambert, B ;

Drouot, V ;

Le Corre, A .

PHYSICAL REVIEW B, 1998, 58 (16) :10700-10704

[4] Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer [J].

Kim, JS ;

Lee, JH ;

Hong, SU ;

Han, WS ;

Kwack, HS ;

Lee, CW ;

Oh, DK .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (03) :252-256

[5] Height-controlled InAs quantum dots by using a thin InGaAs layer [J].

Kim, JS ;

Yu, PW ;

Lee, JI ;

Kim, JS ;

Kim, SG ;

Leem, JY ;

Jeon, M .

APPLIED PHYSICS LETTERS, 2002, 80 (25) :4714-4716

[6] Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy [J].

Li, YF ;

Ye, XL ;

Xu, B ;

Liu, FQ ;

Ding, D ;

Jiang, WH ;

Sun, ZZ ;

Zhang, YC ;

Liu, HY ;

Wang, ZG .

JOURNAL OF CRYSTAL GROWTH, 2000, 218 (2-4) :451-454

[7] Growth and optical characterizations of InAs quantum dots on InP substrate:: towards a 1.55 μm quantum dot laser [J].

Paranthoen, C ;

Platz, C ;

Moreau, G ;

Bertru, N ;

Dehaese, O ;

Le Corre, A ;

Miska, P ;

Even, J ;

Folliot, H ;

Labbé, C ;

Patriarche, G ;

Simon, JC ;

Loualiche, S .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :230-235

[8] Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates [J].

Saito, H ;

Nishi, K ;

Sugou, S .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :267-269

[9] Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications [J].

Schwertberger, R ;

Gold, D ;

Reithmaier, JP ;

Forchel, A .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :248-252

[10] Long-wavelength InP-based quantum-dash lasers [J].

Schwertberger, R ;

Gold, D ;

Reithmaier, JP ;

Forchel, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (06) :735-737

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