Improvement in the ability to block Hg out diffusion from Hg1-xCdxTe by hydrogenation

被引:4
作者
Anjali
Srivastava, P.
Mohapatra, S.
Pal, R.
Vyas, H. P.
Sekhar, B. R.
Sehgal, H. K.
机构
[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India
[2] Inst Phys, Bhubaneswar 751005, Orissa, India
[3] Solid State Phys Lab, Delhi 110054, India
关键词
D O I
10.1088/0268-1242/21/8/002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hydrogenation and double-layer passivation of mercury cadmium telluride (Hg1-xCdxTe or MCT) is studied and compared with passivation by a single CdTe layer. Two different passivated structures, namely CdTe/hydrogenated MCT and ZnS/CdTe/MCT, are investigated using Rutherford backscattering spectroscopy. No significant improvement in the compositional profile of CdTe/MCT is seen in a doubly passivated ZnS/CdTe/MCT structure, i.e. the presence of a ZnS passivating layer does not improve the compositional profile in CdTe/MCT structures. Similar to the CdTe/MCT sample, ZnS/CdTe/MCT was also found to have a 35 nm thick interlayer mixing region between CdTe and MCT. In CdTe/hydrogenated MCT the interface is found to be sharp and suggests complete blockage of Hg out diffusion by hydrogenation, and it is also observed that CdTe/hydrogenated MCT preserves its effectiveness in preventing the Hg out diffusion even after annealing at 80 degrees C in a vacuum. This improvement may be due to restriction of Hg vacancy diffusion by hydrogenation.
引用
收藏
页码:998 / 1001
页数:4
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