DPSSL and FL pumps based on 980nm-telecom pump laser technology:: Changing the industry

被引：19

作者：

Lichtenstein, N ^{[1
]}

Schmidt, B ^{[1
]}

Fily, A ^{[1
]}

Weiss, S ^{[1
]}

Arlt, S ^{[1
]}

Pawlik, S ^{[1
]}

Sverdlov, B ^{[1
]}

Müller, J ^{[1
]}

Harder, C ^{[1
]}

机构：

[1] Bookham Switzerland AG, CH-8045 Zurich, Switzerland

来源：

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS II | 2004年 / 5336卷

关键词：

semiconductor laser diodes; broad-area laser; laser bar; high-power; reliability; brightness; AuSn solder;

D O I：

10.1117/12.558737

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Diode-pumped solid state laser (DPSSL) and fiber laser (FL) are believed to become the dominant systems of very high power lasers in the industrial environment. Today, ranging from 100 W to 5 - 10 kW in fight output power, their field of applications spread from biomedical and sensoring to material processing. Key driver for the wide spread of such systems is a competitive ratio of cost, performance and reliability. Enabling high power, highly reliable broad-area laser diodes and laser diode bars with excellent performance at the relevant wavelengths can further optimize this ratio. In this communication we present, that this can be achieved by leveraging the tremendous improvements in reliability and performance together with the high volume, low cost manufacturing areas established during the "telecom-bubble". From today's generations of 980-nm narrow-stripe laser diodes 1.8 W of maximum CW output power can be obtained fulfilling the stringent telecom reliability at operating condition. Single-emitter broad-area lasers deliver in excess of I I W CW while from similar 940-nm laser bars more than 160 W output power (CW) can be obtained at 200 A. In addition, introducing telecom-grade AuSn-solder mounting technology on expansion matched subassemblies enables excellent reliability performance. Degradation rates of less than 1% over 1000 h at 60 A are observed for both 808-nm and 940-nm laser bars even under harsh intermittent operation conditions.

引用

页码：77 / 83

页数：7

共 5 条

[1]

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[2]

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Schmidt, B ;

Lichtenstein, N ;

Sverdlov, B ;

Matuschek, N ;

Mohrdiek, S ;

Pliska, T ;

Müller, J ;

Pawlik, S ;

Arlt, S ;

Pfeiffer, HU ;

Fily, A ;

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[4]

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[5]

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