Fast colloidal synthesis of scalable Mo-rich hierarchical ultrathin MoSe2-x nanosheets for high-performance hydrogen evolution

被引:191
作者
Zhou, Xiaoli [1 ,2 ,3 ]
Jiang, Jun [1 ,2 ,3 ]
Ding, Tao [1 ,2 ,3 ,4 ]
Zhang, Jiajia [1 ,4 ,5 ]
Pan, Bicai [1 ,5 ]
Zuo, Jian [1 ]
Yang, Qing [1 ,2 ,3 ,4 ]
机构
[1] USTC, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] USTC, Dept Chem, Hefei 230026, Anhui, Peoples R China
[3] USTC, Lab Nanomat Energy Convers, Hefei 230026, Anhui, Peoples R China
[4] USTC, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
[5] USTC, Dept Phys, Hefei 230026, Anhui, Peoples R China
关键词
ACTIVE EDGE SITES; CATALYTIC-ACTIVITY; LAYER MOS2; THIN-FILMS; MONOLAYER; GRAPHENE; ELECTROCATALYST; EXFOLIATION; DISELENIDE; PRESSURE;
D O I
10.1039/c4nr02716g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
MoSe2 nanosheets have been extensively pursued due to the outstanding properties of this typical layered transition metal dichalcogenide (LTMD). In this work, we report a facile, fast strategy to synthesize scalable hierarchical ultrathin MoSe2-x (x similar to 0.47) nanosheets. The nanosheets possess 2-5 Se-Mo-Se atomic layers and were synthesised through a bottom-up colloidal route within 20 mins under mild conditions from the reaction of MoO2(acac)(2) with dibenzyl diselenide. The as-obtained hierarchical ultrathin MoSe2-x nanosheets are Mo-rich with a Se vacancy and show excellent HER performance with a small overpotential of similar to 170 mV, large cathodic currents, and a Tafel slope of 98 mV per decade. Such high performance has been attributed to the unique structure of the Se vacancy defect, large surface area, as well as the enhanced conductivity. Meanwhile, the pathway can be extended as a general strategy to prepare other metal selenides, such as ultrathin WSe2 and SnSe nanosheets, and PbSe nanocrystals. It will also pave a new way to synthesize scalable nanostructured materials for intriguing nanodevices and large-scale applications.
引用
收藏
页码:11046 / 11051
页数:6
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