Crystal Growth of Nonpolar m-Plane ZnO on a Lattice-Matched (100) γ-LiAlO2 Substrate

被引：33

作者：

Chou, Mitch M. C. ^{[1
]}

Chang, Liuwen ^{[1
]}

Hang, Da-Ren ^{[1
]}

Chen, Chenlong ^{[1
]}

Chang, Da-Sin ^{[1
]}

Li, Chu-An ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 05期

关键词：

SAPPHIRE; FILMS; 11(2)OVER-BAR-0;

D O I：

10.1021/cg800328g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, a nearly lattice-matched (100) gamma-LiAlO2 single crystal was demonstrated as a potential substrate for the epitaxial growth of nonpolar ZnO materials. The adopted growth approach is a simple chemical vapor deposition (CVD) method. The orientation was identified as the [10-10] orientation (m-plane) by the X-ray diffraction pattern. Characterization Of further structures and the defects of nonpolar ZnO films were performed by field emission transmission electron microscopy (FETEM). Roorn-temperature photoluminescence spectra of nonpolar ZnO showed a strong UV emission peak at around 377 nm and a negligible green band emission. The dependence of growth characteristics on the growth temperatures, deposition time, and chamber pressure were investigated.

引用

页码：2073 / 2078

页数：6

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