Electronic and optical properties of Ge-doped silica optical fiber

被引：2
|
作者：
Guan, Xiaoning [1 ,2 ,3 ]
Zhang, Ru [1 ,3 ,4 ]
Jia, Baonan [1 ]
Chen, Xi [1 ,4 ]
Yan, Binbin [1 ]
Peng, Gang-Ding [5 ]
Li, Shanjun [6 ]
Lu, Pengfei [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
[3] Beijing Univ Posts & Telecommun, Beijing Key Lab Space Ground Interconnect & Conve, Xitucheng Rd 10, Beijing 100876, Peoples R China
[4] Beijing Univ Posts & Telecommun, Sch Ethn Minor Educ, Beijing 100876, Peoples R China
[5] Univ New South Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia
[6] Sichuan Univ, Coll Elect Engn & Informat Technol, Chengdu 610065, Sichuan, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2019年 / 33卷 / 12期
基金：
中国国家自然科学基金;
关键词：
First-principle; Ge-doped silica; Si-Ge-Si defect; membered ring; absorption peak; RING STRUCTURES; CENTERS; GLASSES; DEFECT; SIO2; IRRADIATION; BAND; LUMINESCENCE; MECHANISMS; DISPERSION;
D O I：
10.1142/S0217984919501501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electronic and optical properties of Germanium-doped (Ge-doped) silica optical fiber are investigated by employing first-principle methods. The substitution of a Ge atom with a Silicon (Si) atom or an Oxygen (O) atom in different "Si-O-Si" membered rings is analyzed. Compared with the experimental data observed at around 5 eV, our calculated results reveal that the characteristic absorption peak at 5.12 eV may be caused by Si-Ge-Si defect in 5-membered ring (5MR). Our study of Ge-doped approach in different ring structures will be useful in the application of Ge-doped optical fiber sensing.
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页数：11
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