Hyperthermal H atom interactions with D/Si(100): Effects of incident H atom kinetic energy on the removal of adsorbed D

被引:38
作者
Buntin, SA
机构
[1] Natl. Inst. of Std. and Technology, Surf. and Microanalysis Sci. Div., Gaithersburg
关键词
D O I
10.1063/1.472077
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interactions of H atoms having hyperthermal energies with a monodeuteride-terminated Si(100) surface are investigated. H atoms having mean kinetic energies of 1.0 and 2.9 eV are generated by 248 and 193 nm laser photolysis, respectively, of a pulsed, free-jet expansion of HI. Full characterization of the laser photolysis conditions allows the determination of the relative, as well as absolute, H atom exposures for these two kinetic energies. The depletion probability of adsorbed D per incident H atom is identical for species having incident kinetic energies of 1.0 and 2.9 eV and has an absolute value of 0.3 +/- 0.2.
引用
收藏
页码:2066 / 2075
页数:10
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