High-efficiency energy up-conversion at GaAs-GaInP2 interfaces (vol 67, pg 2813, 1995)

被引:1
作者
Yuan, ZL
Xu, ZY
Wang, YQ
Wang, JN
Ge, WK
机构
[1] CHINESE ACAD SCI,INST SEMICOND,NLSM,BEIJING 100083,PEOPLES R CHINA
[2] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG
关键词
D O I
10.1063/1.118641
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1628 / 1629
页数:2
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共 9 条
  • [1] THEORY OF AUGER UP-CONVERSION IN QUANTUM-WELLS IN A QUANTIZING MAGNETIC-FIELD
    BADALIAN, SM
    ROSSLER, U
    POTEMSKI, M
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (36) : 6719 - 6728
  • [2] Elastic light scattering from semiconductor structures: Localized versus propagating intermediate electronic excitations
    Belitsky, VI
    Cantarero, A
    Pavlov, ST
    Gurioli, M
    Bogani, F
    Vinattieri, A
    Colocci, M
    [J]. PHYSICAL REVIEW B, 1995, 52 (23) : 16665 - 16675
  • [3] BELITSKY VI, 1996, SOLID STATE COMMUN, V97, P389
  • [4] HIGH-EFFICIENCY ENERGY UP-CONVERSION AT GAAS-GAINP2 INTERFACES
    DRIESSEN, FAJM
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (19) : 2813 - 2815
  • [5] RESONANT RAYLEIGH-SCATTERING FROM AN INHOMOGENEOUSLY BROADENED TRANSITION - A NEW PROBE OF THE HOMOGENEOUS LINEWIDTH
    HEGARTY, J
    STURGE, MD
    WEISBUCH, C
    GOSSARD, AC
    WIEGMANN, W
    [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (13) : 930 - 932
  • [6] LOW-TEMPERATURE ANTI-STOKES LUMINESCENCE MEDIATED BY DISORDER IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES
    HELLMANN, R
    EUTENEUER, A
    HENSE, SG
    FELDMANN, J
    THOMAS, P
    GOBEL, EO
    YAKOVLEV, DR
    WAAG, A
    LANDWEHR, G
    [J]. PHYSICAL REVIEW B, 1995, 51 (24): : 18053 - 18056
  • [7] POTEMSKI M, 1991, PHYS REV LETT, V66, P2339
  • [8] TOMITA A, 1992, OSA TECHNICAL DIGEST, V13, P116
  • [9] YUAN ZL, 1995, APPL PHYS LETT, V67, P2813