Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors

被引：8

作者：

Kim, JG ^{[1
]}

Ihn, B ^{[1
]}

Kim, B ^{[1
]}

Lee, KG ^{[1
]}

Lee, W ^{[1
]}

Lee, SW ^{[1
]}

机构：

[1] KOREA ELECT CO LTD,CTR RES & DEV,POHANG 790784,SOUTH KOREA

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 04期

关键词：

D O I：

10.1016/0038-1101(95)00187-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extraction method for device dimensions and the lateral channel doping profile of a vertical double-diffused MOS transistor has been developed. Using C-V characterization and two-dimensional numerical analysis, the lateral device structure parameter could be extracted. The extracted device parameters are in good agreement with the expected values for a fabricated device sample. The proposed method in this paper can be very useful for analysing the electrical characteristics of VDMOS transistors.

引用

页码：541 / 546

页数：6

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