Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires

被引：8
|
作者：
Emiliani, V
Lienau, C
Hauert, M
Colí, G
DeGiorgi, M
Rinaldi, R
Passaseo, A
Cingolani, R
机构：
[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany
[2] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England
[3] Univ Lecce, Dept Mat Sci, Unita INFM, I-73100 Lecce, Italy
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.60.13335
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on a near-field spectroscopic study of single V-shaped InxGa1-xAs/GaAs quantum wires. With subwavelength resolution, the emission from single InxGa1-xAs wires and connecting planar quantum wells-separated by 250 nm-are individually resolved. The contributions of both monolayer height fluctuations on a 100 nm length scale and of short range compositional disorder to the localization of excitons in V-shaped quantum wires are separately identified and their implications for far-field PL spectra discussed. An upper limit for the migration length of the photogenerated excitons within the GaAs barrier layers of 250 nm is determined. [S0163-1829(99)01740-3].
引用
收藏
页码：13335 / 13338
页数：4
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