Effect of doping method on microstructural and defect profile of Sb-BaTiO3

被引:17
作者
Brzozowski, E.
Caballero, A. C.
Villegas, M.
Castro, M. S.
Fernandez, J. F.
机构
[1] Univ Nacl Mar del Plata, CONICET, INTEMA, Inst Mat Sci & Technol, RA-7608 Mar Del Plata, Argentina
[2] CSIC, Inst Ceram & Vidrio, Electroceram Dept, Ceram Smart Syst Grp, E-28049 Madrid, Spain
关键词
grain growth; defects; microstructure-final; electrical conductivity; BaTiO3 and titanates;
D O I
10.1016/j.jeurceramsoc.2005.04.017
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrical properties in BaTiO3 based ceramics are strongly dependent on composition and microstructural development. In this work, we studied the effect of the particle coating as doping method on microstructure and electrical properties of Sb-doped BaTiO3. The advanced doping method involved surface-coated BaTiO3 particles with a thin film of a metal-organic precursor solution. Results were compared with the performance obtained on conventional doping method. The particle coating as doping method led to an effective grain growth inhibition as well as significant microstructure improvement. The incorporation of dopant into the perovskite lattice is influenced by the doping method. Results suggested that Sb acted as donor dopant on A or/and B sites, and also as acceptor on B sites, modifying the grain boundaries structure characteristics. Dopant incorporation method affected the defect structure. and therefore, the donor dopant concentration for the semiconductor insulator transition in BaTiO3 ceramics. (c) 2005 Elsevier Ltd. All rights reserved.
引用
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页码:2327 / 2336
页数:10
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