GaSe:Er3+ crystals for SHG in the infrared spectral range

被引：21

作者：

Feng, Z. -S. ^{[1
,2
,3
]}

Guo, J. ^{[4
]}

Xie, J-J ^{[4
]}

Zhang, L. -M. ^{[4
]}

Gao, J. -Y. ^{[1
,2
]}

Andreev, Yu M. ^{[5
,6
]}

Izaak, T. I. ^{[6
]}

Kokh, K. A. ^{[6
,7
,8
]}

Lanskii, G. V. ^{[5
,6
]}

Shaiduko, A. V. ^{[5
,6
]}

Shabalina, A. V. ^{[6
]}

Svetlichnyi, V. A. ^{[6
]}

机构：

[1] Jilin Univ, Key Lab Coherent Light & Atom & Mol Spect, Minist Educ, Changchun 130012, Peoples R China

[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China

[3] Aviat Univ Air Force, Changchun 130022, Peoples R China

[4] Chinese Acad Sci, State Key Lab Laser Interact Matter, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[5] Inst Monitoring Climat & Ecol Syst SB RAS, Lab Geosphere Biosphere Interact, Tomsk 634055, Russia

[6] Tomsk State Univ, Lab Adv Mat & Technol, Siberian Phys Techn Inst, Tomsk 634050, Russia

[7] SB RAS, Lab Crystal Growth, Inst Geol & Mineral, Novosibirsk 630090, Russia

[8] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

OPTICS COMMUNICATIONS | 2014年 / 318卷

基金：

中国国家自然科学基金;

关键词：

GaSe; Er doping; Crystal growth; Characterization; OPTICAL-PROPERTIES; GENERATION;

D O I：

10.1016/j.optcom.2013.12.050

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Centimeter-sized Er-doped single crystals were grown from the melts GaSe:Er(0.025, 0.1, 0.5, 1 and 2 at%) by modified vertical Bridgman technology. Real Er content is ascertained as 0.009, 0.019, 0.033, 0.042 and 0.048 at%, respectively. Solubility of Er in GaSe does not exceed 5 x 10(-4). Optimal doping of 0.033 at% of Er was established from SHG experiment. Improved optical quality is identified as a reason of increased nonlinearity for about 24% to that in pure GaSe. New Raman scattering band is found at 2900 cm(-1) that properly related to F-4(9/2)-> I-4(9/2) transition of Er3+ ion. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：205 / 211

页数：7

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