Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi-3(+) ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of approximate to 20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi-3(+) ions considered here have a much higher mass. Atomistic simulations prove that each Bi(3)(+)impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. [GRAPHICS] High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim