Cathodoluminescence in transmission electron microscopy

被引：15

作者：

Strunk, H. P. ^{[1
]}

Albrecht, M. ^{[1
]}

Scheel, H. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Microcharacterizat, Dept Mat Sci & Engn, D-91058 Erlangen, Germany

来源：

JOURNAL OF MICROSCOPY | 2006年 / 224卷

关键词：

cathodoluminescence; chalcopyrite films; InGaN quantum well homogeneity; initial electron irradiation damage; transmission electron microscopy;

D O I：

10.1111/j.1365-2818.2006.01670.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We describe a cathodoluminescence spectrometer that is attached to an analytical transmission electron microscope. After a brief consideration of the set-up and the peculiarities of recording spectra and of mapping defect distributions in panchromatic and monochromatic cathodoluminescence, we discuss two examples of applications. Emphasis is placed on the potential for obtaining novel information about materials and processes on a microscopic and a nanoscopic scale by combining cathodoluminescence with the structural and chemical information for the same site of the specimen. We select an example concerning the role of In distribution in light emission from InGa/GaN quantum wells and a second one concerning the analysis of the initial electron radiation damage of Cu(In,Ga)Se-2 photovoltaic films.

引用

页码：79 / 85

页数：7

共 22 条

[1] Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope [J].

Albrecht, M ;

Strunk, HP ;

Weyher, JL ;

Grzegory, I ;

Porowski, S ;

Wosinski, T .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) :2000-2005

[2] Resonant hole localization and anomalous optical bowing in InGaN alloys [J].

Bellaiche, L ;

Mattila, T ;

Wang, LW ;

Wei, SH ;

Zunger, A .

APPLIED PHYSICS LETTERS, 1999, 74 (13) :1842-1844

[3] Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys [J].

Bellaiche, L ;

Zunger, A .

PHYSICAL REVIEW B, 1998, 57 (08) :4425-4431

[4]

Bethge H., 1987, Electron microscopy in solid state physics

[5] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[6]

HOLT DB, 1989, TECHNIQUES PHYSICS, V12, P373

[7] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].

Im, JS ;

Kollmer, H ;

Off, J ;

Sohmer, A ;

Scholz, F ;

Hangleiter, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438

[8] Localized luminescence centers of InGaN [J].

Kanie, H ;

Tsukamoto, N ;

Koami, H ;

Kawano, T ;

Totsuka, T .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :52-56

[9] Large band gap bowing of InxGa1-xN alloys [J].

McCluskey, MD ;

Van de Walle, CG ;

Master, CP ;

Romano, LT ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2725-2726

[10] Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95 multiple quantum wells [J].

Narukawa, Y ;

Kawakami, Y ;

Fujita, S ;

Nakamura, S .

PHYSICAL REVIEW B, 1997, 55 (04) :R1938-R1941

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