Analysis and Design of the Classical CMOS Schmitt Trigger in Subthreshold Operation

被引：53

作者：

Pasini Melek, Luiz Alberto ^{[1
]}

da Silva, Anselmo Luis, Jr. ^{[2
]}

Schneider, Marcio Cherem ^{[3
]}

Galup-Montoro, Carlos ^{[3
]}

机构：

[1] Fed Univ Santa Catarina UFSC, BR-88040900 Florianopolis, SC, Brazil

[2] Univ Fed Santa Catarina, Florianopolis, SC, Brazil

[3] Univ Fed Santa Catarina, Elect & Elect Engn Dept, Florianopolis, SC, Brazil

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2017年 / 64卷 / 04期

关键词：

CMOS inverter; Schmitt trigger; subthreshold operation; ultra-low power; ultra-low voltage; THRESHOLD VOLTAGE LEVELS; ACCURATE DETERMINATION; SYSTEMS; ENERGY; POWER;

D O I：

10.1109/TCSI.2016.2631726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the classical CMOS Schmitt trigger (ST) operating in the subthreshold regime is analyzed. The complete DC voltage transfer characteristic of the CMOS ST is determined. The metastable segment of the characteristic is explained in terms of the negative resistance of the NMOS and PMOS subcircuits of the ST. Small-signal analysis is carried out to determine the minimum supply voltage at which the hysteresis appears and to obtain a rough estimation of the hysteresis width. It is shown that the theoretical minimum supply voltage required to obtain hysteresis is 2ln(2 + root 5) kT/q = 75 mV at room temperature. A test chip with CMOS Schmitt triggers was designed and fabricated in a 180 nm technology in order to study their operation at supply voltages between 50 mV and 1000 mV.

引用

页码：869 / 878

页数：10

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