Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

被引：40

作者：

De Santi, Carlo ^{[1
]}

Meneghini, Matteo ^{[1
]}

Monti, Desiree ^{[1
]}

Glaab, Johannes ^{[2
]}

Guttmann, Martin ^{[3
]}

Rass, Jens ^{[2
]}

Einfeldt, Sven ^{[2
]}

Mehnke, Frank ^{[3
]}

Enslin, Johannes ^{[3
]}

Wernicke, Tim ^{[3
]}

Kneissl, Michael ^{[2
,3
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy

[2] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[3] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36,EW 6-1, D-10623 Berlin, Germany

来源：

PHOTONICS RESEARCH | 2017年 / 5卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; EXCITON LOCALIZATION; EMISSION; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; RADIATION; DEFECTS;

D O I：

10.1364/PRJ.5.000A44

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper reports a comprehensive analysis of the origin of the electroluminescence (EL) peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral measurements at several temperatures and currents, (i) we extract information on the physical origin of the various spectral bands, and (ii) we develop a novel closed-form model based on the Shockley-Read-Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep levels. In the samples under test, the three EL bands are ascribed to the following processes: band-to-band recombination in the quantum wells (main EL peak), a parasitic intra-bandgap radiative transition in the quantum well barriers, and a second defect-related radiative process in the p-AlGaN superlattice. (C) 2017 Chinese Laser Press

引用

页码：A44 / A51

页数：8

共 60 条

[1] AlGaN single-quantum-well light-emitting diodes with emission at 285 nm [J].