Numerical study of thin films CIGS bilayer solar cells using SCAPS

被引：56

作者：

Ihalane, El Hassane ^{[1
]}

Atourki, Lahoucine ^{[1
]}

Kirou, Hassan ^{[1
]}

Ihlal, Ahmed ^{[1
]}

Bouabid, Khalid ^{[1
]}

机构：

[1] Univ Ibn Zohr, Dept Phys, Fac Sci, LMER, BP 8106, Agadir 80000, Morocco

来源：

MATERIALS TODAY-PROCEEDINGS | 2016年 / 3卷 / 07期

关键词：

CIGS solar cells; Thin films; Photovoltaic parameters; SCAPS-1D; Simulation; PERFORMANCE; DEVICE; LAYERS;

D O I：

10.1016/j.matpr.2016.04.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present a simulation study of thin films solar cells structure ZnO/CdS/CuIn(1-x) GaxSe(2)/CuIn(1-y) GaySe2 based on alternated CIGS absorber layers, using one dimensional simulator SCAPS-1D. We evaluated the open-circuit voltage (V-oc), short-circuit current density (J(sc)), fill factor (FF) and efficiency (eta) of the structure as a function of band gaps and thicknesses of CIGS bi-layer. We found that the band gap E-g and thickness of the top absorber (CuIn(1-x) GaxSe(2)) strongly influence the performance of the solar cell. The efficiency of the CIGS solar cells with a second absorber layer can be increased if the band gap of this layer is equal to 1.38eV. The best efficiency is achieved with thicknesses of around 1100 nm and 600 nm respectively for top and bottom absorber layers is close to 22.5 %. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：2570 / 2577

页数：8

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