Electrodeposition of thin sulfide films:: nucleation and growth observed for Bi2S3

被引:31
作者
Grubac, Z
Metikos-Hukovic, M
机构
[1] Univ Zagreb, Fac Chem Engn & Technol, Dept Electrochem, Zagreb 10000, Croatia
[2] Univ Split, Fac Chem Technol, Dept Gen & Inorgan Chem, Split 21000, Croatia
关键词
nucleation; bismuth; sulfide films; chronoamperometry;
D O I
10.1016/S0040-6090(02)00350-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The potentiostatic pulse technique proved to be the most powerful electrochemical technique for in situ studies of the early stages of Bi2S3 electrodeposition on bismuth. The current-time response recorded at the overpotentials in the vicinity of E-r (Bi2S3/Bi) in dependence of hydrogen sulfide ion concentrations, was described by a theoretical expression for three-dimensional progressive nucleation and growth under diffusion control. Through the application of relations which hold true for such a nucleation model, the following parameters were determined: (i) the anodic nucleation potential (E-AN); (ii) the rate of nucleation (AN(infinity)); (iii) the diffusion coefficient (D); and (iv) the density of the growing sites (N-s). (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:248 / 256
页数:9
相关论文
共 50 条
  • [1] Preparation and properties of Bi2S3 films
    V. N. Semenov
    O. V. Ostapenko
    Inorganic Materials, 2000, 36 : 211 - 213
  • [2] Preparation and properties of Bi2S3 films
    Semenov, VN
    Ostapenko, OV
    INORGANIC MATERIALS, 2000, 36 (03) : 211 - 213
  • [3] Chemical deposition of Bi2S3 thin films on glass substrates pretreated with organosilanes
    Huang, L
    Nair, PK
    Nair, MTS
    Zingaro, RA
    Meyers, EA
    THIN SOLID FILMS, 1995, 268 (1-2) : 49 - 56
  • [4] Synthesis and growth mechanism of Bi2S3 nanoribbons
    Liu, ZP
    Liang, JB
    Li, S
    Peng, S
    Qian, Y
    CHEMISTRY-A EUROPEAN JOURNAL, 2004, 10 (03) : 634 - 640
  • [5] Effects of annealing on nanocrystalline Bi2S3 thin films prepared by chemical bath deposition
    Hussain, Amir
    Begum, Anayara
    Rahman, Atowar
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 21 : 74 - 81
  • [6] CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS FROM THIOACETAMIDE BATH
    DESAI, JD
    LOKHANDE, CD
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 41 (02) : 98 - 103
  • [7] Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition
    Plaza, M.
    Abuin, M.
    Mascaraque, A.
    Gonzalez-Barrio, M. A.
    Perez, L.
    MATERIALS CHEMISTRY AND PHYSICS, 2012, 134 (01) : 523 - 530
  • [8] New Formulation to Synthetize Semiconductor Bi2S3 Thin Films Using Chemical Bath Deposition for Optoelectronic Applications
    Carrillo-Castillo, Amanda
    Rivas-Valles, Brayan G. G.
    Castillo, Santos Jesus
    Ramirez, Marcela Mireles
    Luque-Morales, Priscy Alfredo
    SYMMETRY-BASEL, 2022, 14 (12):
  • [9] Nucleation and growth of ultrathin Bi films
    Hirayama, Hiroyuki
    ADVANCES IN PHYSICS-X, 2021, 6 (01):
  • [10] Nucleation and growth in amorphous (GeS2)0.9(Sb2S3)0.1 thin films
    Pillai, Suresh Kumar
    Podzemna, Veronika
    Bartak, Jaroslav
    Malek, Jiri
    JOURNAL OF CRYSTAL GROWTH, 2013, 382 : 87 - 93