Resonant tunneling electron beam source using GaAs/AlAs/GaAs field emitter

被引：1

作者：

Ohshima, T

Mishima, T

Okamoto, M

Kuroda, K

机构：

[1] Central Research Lab., Hitachi Ltd., Tokyo 185, Kokubunji

来源：

APPLIED SURFACE SCIENCE | 1997年 / 111卷

关键词：

electron beam source; monochromatic electron beam; resonant tunneling effect; GaAs; AlAs; quantum well; vacuum; field emitter; sulfur passivation;

D O I：

10.1016/S0169-4332(96)00696-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ln order to realize a new type of monochromatic electron beam source which incorporates the resonant tunneling effect, methods to form GaAs/AlAs/GaAs field emitters and extract electron beams from them were examined. An undoped GaAs/AlAs/GaAs field emitter showed narrow (0.2 eV) energy distributions almost irrespective with extraction voltages. A delta-doped GaAs/AlAs/GaAs field emitter showed a shoulder. The energy difference between the shoulder and the main peak coincides with that among calculated quantum well subbands. These results suggest the existence of resonant tunneling electron emission in the GaAs/AlAs/GaAs field emitter systems.

引用

页码：170 / 173

页数：4

共 4 条

[1] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES [J].