Tunneling of electrons through heterostructures with quantum rings in a magnetic field
被引:0
作者:
Kovalev, VM
论文数: 0引用数: 0
h-index: 0
机构:
Inst Semicond Phys, Novosibirsk, RussiaInst Semicond Phys, Novosibirsk, Russia
Kovalev, VM
[1
]
Chaplik, AV
论文数: 0引用数: 0
h-index: 0
机构:
Inst Semicond Phys, Novosibirsk, RussiaInst Semicond Phys, Novosibirsk, Russia
Chaplik, AV
[1
]
机构:
[1] Inst Semicond Phys, Novosibirsk, Russia
来源:
SIBERIAN RUSSIAN WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, EDM 2002, VOL 1, PROCEEDINGS
|
2002年
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Tunneling current of electrons through a quantum ring placed in a barrier of InAs/GaAs in the presence of Aaronov-Bohm magnetic flux is calculated. It is shown that tunneling current has oscillation behavior in dependence on magnetic flux through the quantum ring. It is considered two cases: solenoid model and uniform magnetic field one. In the second model tunneling current of electrons is aperiodic function of the magnetic flux.