Metal-assisted chemical etching of silicon and nanotechnology applications

被引:370
作者
Han, Hee [1 ]
Huang, Zhipeng [2 ]
Lee, Woo [1 ,3 ]
机构
[1] KRISS, Taejon 305340, South Korea
[2] Jiangsu Univ, Sci Res Acad, China Australia Joint Res Ctr Funct Mol Mat, Zhenjiang 212013, Peoples R China
[3] Univ Sci & Technol, Dept Nano Sci, Taejon 305333, South Korea
基金
新加坡国家研究基金会;
关键词
Metal-assisted chemical etching; Silicon nanowires; Nanotechnology; SI NANOWIRE ARRAYS; ADVANCED ENERGY-CONVERSION; HETEROJUNCTION SOLAR-CELL; LARGE-AREA; ORDERED ARRAYS; FREE FABRICATION; LOW-COST; SURFACE; PERFORMANCE; ANODES;
D O I
10.1016/j.nantod.2014.04.013
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Silicon nanostructures exhibit promising application potentials in many fields in comparison with their bulk counterpart or other semiconductor nanostructures. Therefore, the exploiting of controllable fabrication methods of silicon nanostructures, and the exploring of further applications of silicon nanostructures gain extensive attentions. In this review, recent advances in metal-assisted chemical etching of silicon, a low-cost and versatile method enabling fine control over morphology feature of silicon nanostructures, are summarized. The overview concerning the applications of silicon nanostructures in the field of energy conversion and storage, and sensors are also presented. (C) 2014 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:271 / 304
页数:34
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