Excitation and relaxation dynamics in dielectrics irradiated by an intense ultrashort laser pulse

被引：24

作者：

Brouwer, Nils ^{[1
]}

Rethfeld, Baerbel

机构：

[1] Tech Univ Kaiserslautern, Dept Phys, Kaiserslautern, Germany

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2014年 / 31卷 / 11期

关键词：

BAND-GAP MATERIALS; ELECTRONIC EXCITATION; PLASMAS; SEMICONDUCTORS; CRYSTALLINE; IONIZATION; BREAKDOWN; SOLIDS; METALS;

D O I：

10.1364/JOSAB.31.000C28

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

When transparent dielectrics are irradiated by an intense, ultrashort laser pulse, the electron density in the conduction band is increased tremendously. Simultaneously, valence band states become unoccupied and the electron-phonon coupling strength is increased. In this paper, we present our work on modeling the ultrafast nonequilibrium dynamics of laser-excited transparent dielectrics with Boltzmann collision integrals. We track the distribution function of conduction and valence band electrons and discuss the effects of Auger recombination in relation to impact ionization and multiphoton/tunnel ionization on the femtosecond timescale. Finally, we investigate the electron-phonon coupling strength in highly excited dielectrics and calculate the electron-phonon coupling parameter for silicon dioxide-like material. (C) 2014 Optical Society of America

引用

页码：C28 / C35

页数：8

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