Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field

被引：1

作者：

Niida, Y. ^{[1
,2
]}

Takashina, K. ^{[1
]}

Fujiwara, A. ^{[1
]}

Fujisawa, T. ^{[1
]}

Hirayama, Y. ^{[2
,3
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

[2] Tohoku Univ, Dept Phys, Aoba Ku, Sendai, Miyagi 9800845, Japan

[3] ERATO, Nucl Spin Elect Project, Sendai, Miyagi 9800845, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

关键词：

conduction bands; effective mass; electrical conductivity; electron density; elemental semiconductors; g-factor; semiconductor quantum wells; semiconductor-insulator boundaries; silicon; silicon compounds; Zeeman effect;

D O I：

10.1063/1.3105987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe a lifting of the twofold spin degeneracy of conduction-band electrons in an upper-valley subband with in-plane magnetic field in a SiO2/Si(100)/SiO2 quantum well, which is manifest in a splitting of a feature in the conductivity accompanying the occupation of the upper-valley subband. The splitting increases in proportion to the in-plane magnetic field, allowing the product of the effective g-factor and effective mass g(*)m(*) to be obtained. The value remains constant over wide ranges of valley splitting, total electron density, and potential bias.

引用

页数：3

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