Forming-Free TaOx Based RRAM Device with Low Operating Voltage and High On/Off Characteristics

被引：13

作者：

Jiang, Y. ^{[1
]}

Tan, C. C. ^{[1
]}

Li, M. H. ^{[1
]}

Fang, Z. ^{[2
]}

Weng, B. B. ^{[2
]}

He, W. ^{[1
]}

Zhuo, V. Y. -Q. ^{[1
]}

机构：

[1] ASTAR, Data Storage Inst, Singapore 117608, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 12期

关键词：

MEMORY;

D O I：

10.1149/2.0101512jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A forming-free TaOx based RRAM cell is demonstrated with low operation voltage and large resistance window. RRAM devices with Pt/TaOx/TiN and Pt/TaOx/Ta film-stacks are investigated in this work. For devices with TiN as top electrode (TE), the initial resistance is at OFF state, thus a forming process is needed prior to subsequent switching operations. For devices with Ta as TE, the initial resistance is at ON state, negating the need for a forming process. This is attributed to the dielectric thinning effect caused by the interfacial reaction between the TaOx and Ta layers during forming gas anneal process. In addition, with Ta as TE, smaller vertical bar V-SET vertical bar and vertical bar V-RESET vertical bar and wider OFF/ON ratio window are observed. Thermal stability up to 400 degrees C during post deposition annealing process with N-2 and O-2 are studied in this work, electrical results suggested excellent thermal stability for this TaOx based RRAM devices. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：N137 / N140

页数：4

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