Characterization of CdTe/CdZnTe detectors

被引：0

作者：

Sato, G ^{[1
]}

Takahashi, T ^{[1
]}

Sugiho, M ^{[1
]}

Kouda, M ^{[1
]}

Watanabe, S ^{[1
]}

Okada, Y ^{[1
]}

Mitani, T ^{[1
]}

Nakazawa, K ^{[1
]}

机构：

[1] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

来源：

2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4 | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new spectral model based on the charge transportation properties in the device. The low mobility-lifetime (mur) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by mutau products, it can also be used as a new method to extract mutau products. Here, we demonstrate how the model works based on the results from 2 mm thick HPB CdZnTe.

引用

页码：2299 / 2303

页数：5

共 5 条

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