Intermediate band mobility in heavily titanium-doped silicon layers

被引：36

作者：

Gonzalez-Diaz, G. ^{[2
]}

Olea, J. ^{[2
]}

Martil, I. ^{[2
]}

Pastor, D. ^{[2
]}

Marti, A. ^{[1
]}

Antolin, E. ^{[1
]}

Luque, A. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, Escuelo Tecn Super Ingn Telecomunicac, E-28040 Madrid, Spain

[2] Univ Complutense Madrid, Fac Ciencias Fis, Dpto Fis Aplicada Elect & Elect 3, E-28040 Madrid, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 09期

关键词：

Intermediate band; Solar cells; Silicon; Titanium; Mobility; Novel concepts; SOLAR-CELLS; EFFICIENCY; IRON;

D O I：

10.1016/j.solmat.2009.05.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1668 / 1673

页数：6

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