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- [1] Ultrafast LT-GaAs photoconductors based on a Fabry-Perot cavity designed for 1550 nm wavelength illumination 2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
- [2] Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (02):
- [5] Terahertz quasi time-domain spectroscopy based on telecom technology for 1550 nm OPTICS EXPRESS, 2017, 25 (11): : 12851 - 12859
- [7] 1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth Journal of Infrared, Millimeter, and Terahertz Waves, 2018, 39 : 340 - 348
- [8] 1550-nm Time-Domain Study of ErAs:GaAs Photoconductive Switches Function of the Erbium Concentration 2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2014,
- [9] 1550-nm Time-Domain Study of ErAs: GaAs Photoconductive Switches as a Function of the Erbium Concentration IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON 2014), 2014, : 313 - 314