Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy

被引：10
|
作者：
Xing, Shu'an [1 ]
Zhao, Guijuan [1 ]
Xu, Yan [1 ]
Wang, Jie [1 ]
Li, Xunshuan [1 ,2 ]
Yang, Wenge [1 ]
Liu, Guipeng [1 ,2 ]
Yang, Jianhong [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
[2] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Gansu, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 854卷
基金：
中国国家自然科学基金;
关键词：
Hexagonal boron nitride; Tungsten disulfide; Band alignment; van der waals heterojunction; X-ray photoelectron spectroscopy; HEXAGONAL BORON-NITRIDE; SPECTRA; OFFSETS; GROWTH; BN;
D O I：
10.1016/j.jallcom.2020.157301
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have fabricated two-dimensional h-BN/WS2 van der Waals heterojunctions by stacking h-BN and WS2 monolayers, and experimentally measured the valence band offset (VBO) of h-BN/WS2 heterojunction by X-ray photoelectron spectroscopy (XPS). The h-BN and WS2 monolayers band gaps and the measured value of VBO were used to determine the conduction band offset (CBO). The measurement results of VBO and CBO are 3.39 +/- 0.15 eV and 0.57 +/- 0.15 eV, respectively, revealing a type-I band alignment. It is urgent to measure the band alignment parameters of h-BN/WS2 heterojunctions for analyzing and designing h-BN/WS2 based devices. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy
    Xing, Shu'an
    Zhao, Guijuan
    Wang, Jie
    Xu, Yan
    Ma, Zhixin
    Li, Xunshuan
    Yang, Wenge
    Liu, Guipeng
    Yang, Jianhong
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 834
  • [2] Ab-initio study of structural and electronic properties of WS2/h-BN van der Waals heterostructure
    Majd, Zahra Ghasemi
    Amiri, Peiman
    Taghizadeh, Seyed Fardin
    SURFACE SCIENCE, 2018, 672 : 13 - 18
  • [3] Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
    Henck, Hugo
    Ben Aziza, Zeineb
    Pierucci, Debora
    Laourine, Feriel
    Reale, Francesco
    Palczynski, Pawel
    Chaste, Julien
    Silly, Mathieu G.
    Bertran, Francois
    Le Fevre, Patrick
    Lhuillier, Emmanuel
    Wakamura, Taro
    Mattevi, Cecilia
    Rault, Julien E.
    Calandra, Matteo
    Ouerghi, Abdelkarim
    PHYSICAL REVIEW B, 2018, 97 (15)
  • [4] Optical detection of passive thermal lattice deformation of monolayer WS2 in van der Waals heterostructures of WS2/h-BN
    Zhou, Ji
    Cao, Xuguang
    Zhang, Debao
    Ye, Wanggui
    Zheng, Changcheng
    Watanabe, Kenji
    Taniguchi, Takashi
    Ning, Jiqiang
    Xu, Shijie
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 999
  • [5] Small valence band offset of h-BN/Al0.7Ga0.3N heterojunction measured by X-ray photoelectron spectroscopy
    Hao, Guo-Dong
    Tsuzuki, Sachiko
    Inoue, Shin-ichiro
    APPLIED PHYSICS LETTERS, 2019, 114 (01)
  • [6] Band alignment of 2 H-phase two-dimensional MoS2/graphene oxide van der Waals heterojunction
    Park, Ick-Joon
    Kim, Tae In
    JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 936
  • [7] Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
    Liu, J. M.
    Liu, X. L.
    Xu, X. Q.
    Wang, J.
    Li, C. M.
    Wei, H. Y.
    Yang, S. Y.
    Zhu, Q. S.
    Fan, Y. M.
    Zhang, X. W.
    Wang, Z. G.
    NANOSCALE RESEARCH LETTERS, 2010, 5 (08): : 1340 - 1343
  • [8] Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy
    Huang, Heyuan
    Yang, Wenge
    Xing, Shu'an
    Zhao, Guijuan
    Li, Xunshuan
    Liu, Guipeng
    Yang, Jianhong
    PHYSICS LETTERS A, 2021, 392
  • [9] Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
    Pierucci, Debora
    Zribi, Jihene
    Henck, Hugo
    Chaste, Julien
    Silly, Mathieu G.
    Bertran, Francois
    Le Fevre, Patrick
    Gil, Bernard
    Summerfield, Alex
    Beton, Peter H.
    Novikov, Sergei V.
    Cassabois, Guillaume
    Rault, Julien E.
    Ouerghi, Abdelkarim
    APPLIED PHYSICS LETTERS, 2018, 112 (25)
  • [10] Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
    Liu, Yang
    Gong, Jiarui
    Acharya, Sudip
    Li, Yiran
    Abrand, Alireza
    Fei, Fan
    Rudie, Justin M.
    Zhou, Jie
    Lu, Yi
    Abbasi, Haris Naeem
    Vincent, Daniel
    Haessly, Samuel
    Tsai, Tsung-Han
    Xiao, Jun
    Mohseni, Parsian K.
    Yu, Shui-Qing
    Ma, Zhenqiang
    APPLIED SURFACE SCIENCE, 2025, 685
12345