A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT

被引：46

作者：

Brown, Raphael ^{[1
]}

Macfarlane, Douglas ^{[1
]}

Al-Khalidi, Abdullah ^{[1
]}

Li, Xu ^{[1
]}

Ternent, Gary ^{[1
]}

Zhou, Haiping ^{[1
]}

Thayne, Iain ^{[1
]}

Wasige, Edward ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, High Frequency Elect Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

GaN; AlGaN; MOS-HEMT; normally-off; enhancement-mode; insulated gate; PECVD SiO2; TRANSISTORS;

D O I：

10.1109/LED.2014.2334394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (V-th) of 3 and 2 V, and very high maximum drain currents (I-DSmax) of over 450 and 650 mA/mm, at a gate voltage (V-GS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.

引用

页码：906 / 908

页数：3

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